NTDN/D. NTDN, NVDN. Power MOSFET. 30 V, 54 A, Single N− Channel, DPAK/IPAK. Features. • Low RDS(on) to Minimize Conduction Losses. SIDY Transistor Datasheet, SIDY Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. AOC Transistor Datasheet, AOC Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog.

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Minimum Gate Threshold Voltage. Typical Turn-Off Delay Time. Inpho Venture Summit to highlight “deeptech”. The product detailed below complies with the specifications published by Mosfef Components. Availability All devices are immediately available in production quantities with a lead-time. Maximum Gate Source Voltage.

We, the Manufacturer or our representatives may use your personal information to contact you to offer support for your design activity and for other related purposes.

Typical Input Capacitance Vds. The products provide ultra-low RSS source-to-source resistance of less than 10mOhms at 10 V gate drive.

The foregoing information relates to product sold on, or after, the date shown below. Number of Elements per Chip. Skip to main content. Typical Turn-On Delay Time.


AOC4810 MOSFET. Datasheet pdf. Equivalent

480 cookies are required to navigate on our Site. Maximum Drain Source Resistance. Sending feedback, please wait Save to parts list Save to parts list. The product detailed below complies with the specifications published by RS Components. The devices are suitable for battery pack applications where two n-channel MOSFETs are connected back-to-back for safe charging and discharging as well as voltage protection. You agree that the Information as provided here through an intermediary may not be error-free, accurate or up-to-date and that it is not advice.

Maximum Gate Threshold Voltage. When board space is a key concern, AOC provides a great option to further enhance power density. This site uses cookies to enhance your visitor experience. This is particularly the case of the buttons “Facebook”, “Twitter”, “Linkedin”.

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AOC MOSFET Datasheet pdf – Equivalent. Cross Reference Search

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Unlike conventional CSP chip mosfett packagingthe Micro-DFN eliminates the risk of die chipping by encapsulating the silicon to provide full protection to the die as well as providing excellent moisture isolation.

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Save this item to a new parts list. Thank you for your feedback. RoHS Certificate of Compliance. Rated with a 30 V breakdown voltage, it is capable of charging and discharging a laptop battery pack with the least amount of power loss and heat dissipation. 8410 feedback, please wait